Abstract
In this article we consider a model which describes the oxidation process of silicon. The two phases, silicon and silicon-dioxide, are separated by a moving mixed zone of thickness O(e), e being a small parameter. We use the techniques of formal asymptotic analysis to derive a model with a sharp reaction front between the two phases. The resulting model agrees with other existing oxidation models on the basis of a sharp interface. In addition we give a proof for the existence, uniqueness, and qualitative behaviour of the solution to the system of ODEs obtained to leading order of the interfacial expansion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.