Abstract
In this article we consider a model which describes the oxidation process of silicon. The two phases, silicon and silicon-dioxide, are separated by a moving mixed zone of thickness O(e), e being a small parameter. We use the techniques of formal asymptotic analysis to derive a model with a sharp reaction front between the two phases. The resulting model agrees with other existing oxidation models on the basis of a sharp interface. In addition we give a proof for the existence, uniqueness, and qualitative behaviour of the solution to the system of ODEs obtained to leading order of the interfacial expansion.
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