The origin of the 1.59-eV luminescence in ZnTe and the nature of the postrange defects from ion implantation

Abstract

We describe constituent-vapor heat-treatment experiments on ZnTe which indicate that the 1.59- eV luminescence in this material is VZn -related. The effects of Ga or I doping suggest further that the band is associated with some species of VZn -donor complex. This understanding of the 1.59- eV luminescence provides additional insight into our earlier study of postrange-defect introduction in ion-implanted ZnTe. The observed survival of the incumbent 1.59-eV band in the postrange zone is discussed in relation to the conclusion from earlier published studies that Zni are the dominant postrange defects in ZnTe. We conclude that Zni are not strongly involved in the observed postrange damage. To the contrary, our work gives some indication that VZn - and/or VTe -related centers are formed in the postrange zone.