Abstract
We studied the recombination at about 3.410eV in nominally undoped GaN and highly oxygen-doped GaN by photoluminescence (PL) and cathodoluminescence (CL). For this line we find an upper limit for the thermal activation energy of EA⩽21±3meV. In time-resolved PL, lifetimes of 300–480ps are observed indicating excitonic recombination. The defect giving rise to this emission can be created by Ar+ ion implantation. In conclusion, the 3.410eV luminescence is attributed to excitons bound to structural defects in hexagonal GaN.
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