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Abstract
The origin of muonium defect centers in semi-insulating GaAs has been studied using newly developed μSR techniques employing alternating electric fields. This technique prevents the accumulation of near-surface charges which may screen the external field. The screening effect was tested at ISIS by the measurements of the current induced by muon beam. Suppression of anomalous muonium signal with electric field suggests that muonium formation proceeds via transport of excess electrons from the ionization track to the muons.
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