Abstract

The origin of neutral muonium defect centers in semi-insulating GaAs has been studied using muon spin rotation/relaxation techniques employing alternating electric fields. This technique prevents the accumulation of near-surface charges which may screen the external field. Suppression of the bond-centered muonium signal with electric field suggests that muonium formation proceeds via transport of excess electrons from the ionization track to the muon. The characteristic field of about 5 kV/cm may correspond to an electric field induced ionization of the muon donor impurity center.

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