Abstract
The stationary photoconductivity and kinetic characteristics in semi-insulating GaAs compensated by oxygen and chromium are investigated: namely, stationary photoconductivity and intrinsic photocurrent optical quenching spectra in the region 0.45 to 1.5 eV, temperature quenching and current–light intensity characteristics of the stationary photocurrent, and the kinetics of the photocurrent decay under intrinsic and impurity photoexcitation. The results obtained are interpreted taking into account fast (s) and slow (r) recombination channels. From the analysis of these dependences a number of main parameters of r and s recombination centres is determined: the energy position of the r and s centres (Evr, s), the ratio of hole to electron capture cross-section at r centres (Spr/Snr), the values of Snr and Sns as well as the concentration (Nr), and initial hole occupation (P) of r centres. The nature of r and s centres in GaAs (O) and GaAs (Cr) is discussed. [Russian Text Ignored]
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