Abstract
The transient current technique has been used to examine current pulses in semi-insulating (SI) GaAs and comparisons have been made with calculated current pulse shapes obtained by analysing both theoretical and measured electric field shapes. This is the first time that this technique for examining such bulk behaviour has been used with SI GaAs. The results show that the form of the weighting field required to reproduce the experimental current pulse shapes in this case is not the expected 1/d, where d is the active region width, but rather is closer to , where E is the electric field across the detector due to the applied bias and is the bias necessary for the active region to extend fully across the detector.
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