Abstract
We have reported on the theory of semiconductor-insulator-semiconductor (SIS) solar cells in a previous publication. In this paper, the fabrication and properties of indium tin oxide/p-Si single-crystal solar cells will be described. The ITO is deposited by the ion-beam sputtering method. Best photovoltaic devices are obtained when the composition of indium tin oxide (ITO) is 91 mole% and 9 mole% SnO2. The device properties as a function of the ITO composition will be described. The thickness and the composition of the oxide-silicon interface is critical for device performance. The existence of a thin interfacial layer is demonstrated by Auger spectroscopy. The effect of temperature on device performance and the spectral response are compared with the theory. The SIS model accurately matches the major trends observed in experimental nITO/p-Si solar cells.
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