Abstract
AbstractThe local vibrational mode absorption lines at 3079.2 and 983.3 cm−1, measured in semi‐insulating LEC‐grown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without boric oxide encapsulant delivers arguments that this impurity atom is nitrogen in the nitrogen‐vacancy (NAs–VGa) defect, which is responsible for the vibrational quadruplet line at 638 cm−1. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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