Abstract
A series of isochronal annealing experiments have been performed on bulk GaAs crystals doped with oxygen. Two centers induced by oxygen, the isolated oxygen interstitial (Oi) and the gallium-oxygen-gallium (Ga-O-Ga) defect, most likely due to oxygen interstitial-arsenic vacancy complex, were monitored using localized vibrational mode absorption. The Ga-O-Ga center dissociates at temperatures above 650 °C resulting in an increase of the Oi concentration. Using the known oscillator strength of Ga-O-Ga transition, the calibration factor between integrated absorption and concentration of isolated oxygen interstitial was determined to be 8×1016 cm−1. The observed increase of absorption bands of both defects after high-temperature annealing indicates that other types of oxygen-containing defects are present.
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