Abstract
Abstract The paper presents measurements of the drift mobility of charge carriers in radio-frequency sputtered films of As2Te3 and As30Te48Si12Ge10, as determined from the initial rate of rise of the transient photoconductivity. The data indicate that the carriers, which are concluded from subsidiary experiments to be holes, exhibit trap-limited band transport in the room-temperature region, interacting with localized levels which in both materials are situated about 0·22 eV from the Fermi level. At low temperatures, a transition occurs to a process of hopping between centres in a second set of localized states about 0·13 eV from the Fermi level, these centres again being present in both As2Te3 and As30Te48Si12Ge10. It is concluded that the greater compositional disorder of the latter material results in a change of position of the valence band mobility edge, but does not appreciably modify the localized state distribution within the mobility gap.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
