Abstract
Ion implantation of PMMA is known to modify its etch rate in an oxygen plasma. This effect can be used as the basis for a lithography system based on ion beam exposure and dry development (Kuwano 1980). In this work we have systematically investigated the role of the main implant parameters; species, dose and energy. Implantation reduces the film thickness, changes its chemistry and reduces its dry etch rate. We elucidate the mechanisms involved in the resist passivation effect and present a critical energy density model to explain the role of the implant parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
