Abstract
Ion implantation of PMMA is known to modify its etch rate in an oxygen plasma. This effect can be used as the basis for a lithography system based on ion beam exposure and dry development (Kuwano 1980). In this work we have systematically investigated the role of the main implant parameters; species, dose and energy. Implantation reduces the film thickness, changes its chemistry and reduces its dry etch rate. We elucidate the mechanisms involved in the resist passivation effect and present a critical energy density model to explain the role of the implant parameters.
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