Abstract
We studied material modification of SiO 2 , Si 3 N 4 and photo-resist film by using high-dose ion implantation technique. The both wet and dry etching rate can be controlled by selecting the ion species and implantation dose. The wet etching rate of SiO 2 film can be changed both increase and decrease direction. The dry etching rate against CF 4 plasma is increased by P+implantation for SiO 2 film and by N+implantation for Si 3 N 4 film, respectively. For photo-resist film, N+implantation can improve the selectivity during plasma etching without degradation of removal characteristics. Those techniques can be quite useful for fabrication process of CMOS devices.
Published Version
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