The mechanism for the high-quality single-phase growth of MnSi films on Si (111) in the presence of Sb flux

Abstract

The microstructures of high-quality single-phase MnSi layers grown on Si (111) by Mn deposition and reaction with Si in the presence of Sb flux are characterized by Z-contrast imaging. It is found that there is a transition layer consisting of two Sb monolayers sandwiching a Mn layer in between the Si substrate and the single-phase MnSi film. This Sb–Mn–Sb sandwich layer effectively prevents deposited Mn atoms from direct reaction with Si atoms in the substrate to form Mn silicides. This explains why high-quality single-phase MnSi layers can be grown with remarkably smooth interface on Si (111) substrates.