Abstract
Photoexcitation and photoluminescence spectra of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films obtained by high-frequency ion-plasmous sputtering was investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. The nature of two intensive luminescent band with maxima in region 3.00 and 3.15 eV and two faint intensive luminescent band with maxima in region 4.00 and 4.25 eV was discussion. Luminescence decay time for band with maximum in region 3.00 and 3.15 eV in different types of b–Ga2O3 and (Y0.06Ga0.94)2O3 thin films was established.
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