Abstract
The structure, phase composition, surface morphology, photoluminescence spectra and the luminescence excitation spectra of $\beta$ –Ga 2 O 3 and (Y 0.06 Ga 0.94 ) 2 O 3 thin films obtained by radio-frequency (RF) ion-plasma sputtering was investigated. It was shown that the processes of sintering and crystallite growth are more pronounced in (Y 0.06 Ga 0.94 ) 2 O 3 films relative to $\beta$ –Ga 2 O 3 films. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. The nature of two intensive luminescent bands with maxima in region 3.00 and 3.15 eV were discussion. Luminescence decay time for band with maximum in region 3.00 and 3.15 eV in different types of $\beta$ –Ga 2 O 3 and (Y 0.06 Ga 0.94 ) 2 O 3 thin films was established.
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