Abstract
Photoexcitation spectra and luminescence of thin films of ZnGa2O4 under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at 3.35, 2.85, 2.50 and 2.38 eV were referred to the luminescence at the expense of electronic transitions between 4Т2, 4Т1, 2Е and 4А2 terms in octahedral complexes (GaO6)9–. It was proposed an energy level diagram with corresponding electronic transitions in such structure. Luminescence band with maximum at 1.75 eV is attributed to oxygen vacancies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
