Abstract
AbstractElectron scattering on the short‐range potential caused by the interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, ionized impurities in CdxHg1–xSe (0≤ x ≤ 0.547) samples annealed in the selenium vapour or in the dynamic vacuum are considered. Within the framework of precise solution of the stationary Boltzmann equation on the base of short‐range principle the temperature dependences of electron mobility in the range 4.2–300 K are calculated. A good coordination of theory and experiment in the investigated temperature range is established. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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