Abstract
The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 1.1×1016cm−3÷1.9×1018cm−3 and in wurtzite p-GaN with impurity concentration 1.9×1019cm−3÷2.6×1020cm−3 are considered. The temperature dependences of electron mobility in the range 15÷500K and hole mobility in the range 100÷1000K are calculated.
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