Abstract
The processes of electron scattering on a short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, and neutral and ionized impurities in wurtzite n-ZnO with impurity concentration ∼1 × 1017 cm−3 are considered. The temperature dependences of electron mobility and Hall factor in the range 15/550 K are calculated.
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