Abstract
Abstract The lifetimes of the 8543 and 8945 keV levels in 28 Si have been measured by the Doppler shift technique using the 27 Al(p, γ) 28 Si reaction resonances at E p = 3096 and 2677 keV, respectively. Both centroid shift and lineshape analysis were used, and the results lead to a value of τ = 15 ± 3 fs for the 8543 keV level and τ = 104 ± 8 fs for the 8945 keV level. The results are compared with previous measurements and available theoretical calculations.
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