Abstract
The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance. The V-GAA structure makes the transistor easy to be scaled down continuously to meet the complementary metal-oxide-semiconductor (CMOS) scaling requirements of the 7/10 nm technology node and beyond. The Si NT device with the hollow structure is demonstrated to have the capability to “deplete” and “screen-out” the out-of gate control carriers in the center of the NT and further result in the better device short channel control. Based on the study in this work, the V-GAA Si NT device with the optimized diameter dimension (=20 nm) can benefit the Ion-state current and reduce the Ioff-state stand-by power simultaneously, due to the less surface roughness scattering and the better short channel control characteristics. The proposed V-GAA Si NT device is regarded as one of the most promising candidates for the future application of the sub-7/10 nm logic era.
Highlights
The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance
The Si NT device with the hollow structure is demonstrated to have the capability to “deplete” and “screen-out” the out-of gate control carriers in the center of the NT and further result in the better device short channel control
Compared to the traditional lateral NW device with the smaller d dimension (d 10 nm) demonstrated by other groups,[3,4] the proposed V-GAA NT device with the larger d dimension (d = 20 nm) is found to have the higher carrier transport mobility/Ion-state current due to the less surface roughness scattering with the acceptable short channel control behavior from the NT hollow structure design
Summary
The vertical gate-all-around (V-GAA) Si nano-tube (NT) devices with different diameter dimensions are studied in this work with the promising device performance. Based on the study in this work, the V-GAA Si NT device with the optimized diameter dimension (= 20 nm) can benefit the Ion-state current and reduce the Ioff-state stand-by power simultaneously, due to the less surface roughness scattering and the better short channel control characteristics.
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
