Abstract
The resistances of the 8192 phase change memory (PCM) cells, arranged in one Bitline of a 64 Mb PCM test chip, are measured. The test results show that during the Reset operation, as the Bitline length increases, the high-resistance values of the PCM cells decrease. And it is very likely that the PCM cells at the farthest distance from the driving circuit could not be operated to a high-resistance state. After analysis, the energy loss caused by the extra resistance of Bitline can account for the above write operation failure. By calculating and further compensating for the energy loss on Bitline, the resistance values of PCM cells on one Bitline tend to be consistent, and thus the yield of 64 Mb PCM test chip is increased from 90% to 99.9%.
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