Abstract
Phase change memory (PCM) cell array is fabricated by a standardcomplementary metal–oxide–semiconductor process and the subsequentspecial fabrication technique. A chalcogenide Ge2Sb2Te5film in thickness 50 nm deposited by rf magnetron sputtering is used asstorage medium for the PCM cell. Large snap-back effect is observed incurrent–voltage characteristics, indicating the phase transition from anamorphous state (higher resistance state) to the crystalline state(lower resistance state). The resistance of amorphous state is twoorders of magnitude larger than that of the crystalline state from theresistance measurement, and the threshold current needed for phasetransition of our fabricated PCM cell array is very low (only severalμA). An x-ray total dose radiation test is carried out on the PCM cellarray and the results show that this kind of PCM cell has excellenttotal dose radiation tolerance with total dose up to 2×106 rad(Si), which makes it attractive for space-based applications.
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