Abstract
A modified method to determine the ultra-thin oxide thickness from the measured high-frequency capacitance as a function of voltage C( V) data of a metal-oxide-semiconductor (MOS) capacitor with a polysilicon gate is described. It is based on a numerical solution of the Poisson equation and takes into account a first order correction for quantum mechanical effects. The maximum-minimum capacitance method is used to determine the average doping concentration in the substrate. The doping concentration in the polysilicon gate is determined by fitting experimental C- V data for an MOS transistor to simulated ones.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
