Abstract
Sandwich structures have been fabricated by successive vacuum deposition of gold (Au), aluminium phthalocyanine chloride (AlPcCl) and aluminium (Al) onto glass substrates. The electrical conductivity has been measured for both oxygen (O2) doped and as-deposited samples. Device characteristics of doped and as-deposited Au/AlPcCl/Al have been measured and are found to show diode rectification. Current density–voltage characteristics under forward bias are assumed to be due to ohmic conduction at lower voltages. At higher voltages there is space charge limited conductivity (SCLC) controlled by an exponential trap distribution above the valence band edge. Transport properties of the O2 doped material at ambient temperature have been determined and are compared with those of as-deposited samples. Under reverse bias, Schottky emission is identified at lower voltages for both oxygen-doped and as-deposited samples. Schottky barrier heights for the doped and as-deposited samples have been determined from reverse bias analysis.
Published Version
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