Abstract
• E T L T i O 2 were prepared by Sol-gel and DC-PMS techniques, respectively. • (0 0 1) lattice in E T L S o l - g e l T i O 2 was random. • (0 0 1) lattice in E T L D C - P M S T i O 2 was parallel to the surface. • (0 0 1) lattice plane restrain the diffusion of N + or NH x + in E T L T i O 2 . • N + or NH x + diffusion has little influence on band structure of E T L D C - P M S T i O 2 . TiO 2 ETL were prepared by DC-PMS and Sol-gel techniques respectively, which could be used in perovskite solar cells. N + and NH x + ions/group beam was used to bombard the surface of Sol-gel and DC-PMS TiO 2 ETLs. After the bombardment, the surface potential and sheet carrier concentration of Sol-gel TiO 2 ETL obviously deteriorated from 4.66 to 4.43 eV and 2.17 to 0.41 (10 11 /cm 2 ), respectively. On the contrary, little deterioration happened onto the surface potential and sheet carrier concentration of DC-PMS TiO 2 ETL, which decreased from 4.81 to 4.79 eV and 2.02 to 1.63 (10 11 /cm 2 ), respectively. Besides, the deterioration of surface potential and sheet carrier concentration for Sol-gel and DC-PMS TiO 2 ETLs was discussed.
Published Version
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