Abstract
Abstract A phenomenological model describing the dependence of deformation processes on ion implantation conditions is proposed. Experimental results of defect formation as well as amorphisation in silicone for the implantation with Ne+, Ar+ and Kr+ ions in the temperature interval of 150–500 K and for ion current densities of 0.5 to 4.0 μA/cm2 are presented. An analysis of the experimental data within the framework of the proposed model has been carried out. The basic characteristics of the defects appearing at silicon amorphisation also have been defined.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call