The parameter influence of ion irradiation on the distribution profile of the defect in silicon films

Abstract

As silicon is an important element in semiconductor devices, the process of defect formation under ion irradiation in it is studied well enough. Modern electronic components are made on silicon lattices (films) that are 100–300nm thick (Chernysh et al., 1980; Shemukhin et al., 2012; Ieshkin et al., 2015). However, there are still features to be observed in the process of defect formation in silicon. In our work we investigate the effect of fluence and target temperature on the defect formation in films and bulk silicon samples.To investigate defect formation in the silicon films and bulk silicon samples we present experimental data on Si+ implantation with an energy of 200keV, fluences range from 5*1014 to 5*1015ion/cm2 for a fixed flux 1μA/cm2 and the substrate temperatures from 150 to 350K The sample crystallinity was investigated by using the Rutherford backscattering technique (RBS) in channeling and random modes.It is shown that in contrast to bulk silicon for which amorphization is observed at 5×1016ion/cm2, the silicon films on sapphire amorphize at lower critical fluences (1015ion/cm2). So the amorphization critical fluences depend on the target temperature. In addition it is shown that under similar implantation parameters, the disordering of silicon films under the action of the ion beam is stronger than the bulk silicon.