Abstract
The processes of defect formation in silicon following high-energy ion implantation were studied using the Hall effect and IR absorption spectroscopy. Point radiation defects were found far beyond the region of typical ion projected ranges. It is suggested that the defects were formed as a result of diffusion of interstitials and vacancies from the implanted region further into the substrate. The efficiency of the formation of these defects was found to decrease with increase of the mass of implanted ions and is thought to be related to the increase in concentration of the interstitial and vacancy traps.
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