Abstract
Nano-sized CeO2 dots were deposited on (001) LaAlO3 substrate by rf magnetron sputtering. After the processing of the artificial decoration defects on the substrate, 100-nm, 150-nm, 200-nm, and 400-nm-thick Tl2Ba2CaCu2O8 (Tl-2212) thin films were grown on it, using dc magnetron sputtering and post annealing process. AFM images showed that the CeO2 nano-dots were distributed well on the substrate surface with 70 nm in diameter and 5 nm in height, and the density of nano-dots was 25±3 dots/μm2. SEM images were used to observe the variations on film surface. Transport critical current density Jc was measured both on Tl-2212 film with nano-dots decorated substrate and untreated single crystal LaAlO3 substrate. From the results, Jc values of Tl-2212 films with nano-dots decorated substrate were lifted significantly, and the pinning strength was improved on Tl-2212 films by nanostructure defects induced from nano-dots.
Accepted Version
Published Version
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