Abstract
Tl2Ba2CaCu2Ox (Tl-2212) thin films with enhanced transport critical current densitiesJc were fabricated by using conventional dc sputtering and a post-annealing process. Inorder to employ artificial defects to improve the flux pinning strength, nano-sizedCeO2 dots weredeposited on the LaAlO3(001) substrates by radiofrequency (rf) magnetron sputtering from a cerium metaltarget prior to the growth of Tl-2212 films. The critical current densityJc (77 K) of the Tl-2212 thin film on the nanodot-introduced substrate reaches6 × 106 A cm − 2 at self-field, which is 1.7 times larger than that on the normal substrate. The enhancement of theJc in Tl-2212 film grown on the substrate with artificial defects ismore obvious in magnetic fields. At 0.5 T dc magnetic field, aJc (77 K)of 3.5 × 104 A cm − 2 is observed, which is about 13 times larger than that on the normal substrate.
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