Abstract
The influence of the additional implantation of electrically inactive impurities of carbon, oxygen, nitrogen, and fluorine on the formation of donor centers in silicon implanted with erbium was studied. It is shown that additional implantation brings about an increase in the concentration of donor centers formed during anneals. Variation in the concentration of donor centers depends on the type of introduced impurity. The results indicate that electrically inactive impurities are involved in the formation of donor centers.
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