One platform for all researcher needs
AI-powered academic writing assistant
Your #1 AI companion for literature search
AI tool for graphics, illustrations, and artwork
Unlock unlimited use of all AI tools with the Editage Plus membership.
Explore Editage Plus
Audio Papers
Ask R Discovery
Translation
Auto-sync
Collaboration
https://doi.org/10.1142/s0217984989000765
Copy DOI
Export
Save
Share
Cite Journal: Modern Physics Letters B |  Publication Date: Apr 20, 1989 |
Affiliation: Institute for Design Problems in Microelectronics
An inversion of the conduction type of the p-silicon surface layer by gas discharge plasma treatment was observed. It was found that this conduction inversion was conditioned by donor center formation. Donor behavior are discussed. Some plasma treatment regimes to induce the donor centers in silicon are reported.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
