Abstract
The charge injection and decaying processes along the vertical directionin single-layer and double-layer Si nanocrystals embedded in aSiO2 matrix are investigated by electrostatic force microscopy. The charges trapped in thedouble-layer Si nanocrystals are found to decay much more slowly than thosetrapped in the single-layer sample. This phenomenon indicates that the double-layerstructure of a Si nanocrystal sample can retard the charge decay process remarkably.We suggest that the Coulomb repulsive interaction of the charges trapped inone Si nanocrystal layer with those trapped in another Si nanocrystal layer isresponsible for the blocking of the charge decay along the vertical direction of thestructure.
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