Abstract
Abstract Barium Strontium Titanate (BST), or BaxSr1-xTiO3, is an excellent ferroelectric material that is widely used on thin film applications in microelectronic devices, making BST very essential to the tech industries. This research aims to fabricate Cuprum doped BST thin films at low temperature using the Chemical Solution Deposition (CSD) and spin coating technique, and then to analyze the thin film’s band gap energy from the UV-Vis curve, XRD Spectral and EDAX. The advantage lies in the use of low temperatures in which it allows a significant energy savings compared to other studies. Using the Kubelka-Munk method with the Tauc Plot relation, the bandgap energy values for each BST substrates were obtained. Without Cuprum (II) Acetate dopant, the Band Gap values of the thin film samples are 3.84 eV and 3.77 eV. With 3% concentration of Cuprum (II) Acetate dopant, we obtained smaller Band Gap values, which are 3.74 eV and 3.71 eV. Based on the XRD spectral analysis, the lattice parameters were determined with a tetragonal crystal structure. However, according to the EDAX analysis, the elemental composition obtained is not yet stoichiometric. This research is important to serve as a reference for other researchers and manufacturers to opt into fabrication of thin films with lower energy cost, provide guidance for researchers to have more flexibility in their own thin film fabrication.
Published Version
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