Abstract
Pure Ba0,5Sr0,5TiO3 (BST) thin film, BST doped by niobium (BNST) and BST doped by iron (BFST) have been synthesized on p‐type Si (100) substrates using Chemical Solution Deposition (CSD) methods followed by spin coating and annealing techniques. Current‐voltage characterizations on these sample result in agreement that all of the BST, BNST, and BFST thin films have photodiode properties. Electrical conductivity values of BST, BNST, and BFST are in the range of conductivity values of semiconductor materials. Niobium or iron doping on the BST samples increase their conductivity value their dielectric constant. This conductivity values may change when a light is exposed on the film surface. Absorbance and reflectance characterizations show that the BST, BNST, and BFST thin films absorb certain range of visible and infrared light. It is convincing that the BST, BNST, and BFST thin films might be used as photodiode light sensor.
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