Abstract
(Ba0.7Sr0.3)TiO3 thin films were deposited by r.f.-magnetron sputtering on Pt/Ti/Si, Pt/TiSi2/Si and Pt/Ti/SiO2/Si substrates, respectively, and annealed at 650 ‡C for 30s by Rapid Thermal Annealing (RTA). XRD (X-ray diffraction) patterns revealed that the BST films had perovskite structure without preferred orientation. Auger depth profiles of barium-strontium titanate (BST) films on various substrates were performed. In the Pt/Ti/Si and Pt/TiSi2/Si structures, Si diffused into the BST film, but in the Pt/Ti/SiO2/Si structure, the diffusion of Si into the BST film was prevented and the interface between the BST film and the electrode was stable. The dielectric constants were about 310–260 (100 kHz–1 MHz).
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