Abstract
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer deposition and locally studied by conductive atomic force microscopy showing repetitive bipolar resistive switching. Experiments using macroscopic copper top electrodes, which are electroformed, bipolar switched, and removed again from the TiO2–Pt stack, prove the formation of local conductive filaments with bipolar switching properties. The localized filaments can be switched repetitively with a resistance ratio of 30. Our findings underline that Cu diffusion and the formation of filaments are the major mechanism for the resistive switching in Cu/TiO2/Pt cells.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
