Abstract
The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic current–voltage ( I– V) measurements and conducting atomic force microscopy (CAFM). Detailed I– V measurements show that in metal/GO/Pt sandwiches, the RS originates from the formation and rupture of conducting filaments. An analysis of the temperature dependence of the ON-state resistance reveals that the filaments are composed of metal atoms due to the diffusion of the top electrodes under a bias voltage. Moreover, the RS is found to occur within confined regions of the metal filaments. The RS effect is also observed in GO/Pt structures by CAFM. It is attributed to the redox reactions between GO and adsorbed water induced by external voltage biases.
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