Abstract
Abstract Electrical conduction mechanism and bipolar resistive switching properties of the manganese oxide thin films resistive random access memory (RRAM) devices for high resistive status and low resistive status (HRS/LRS) were investigated and discussed. The electrical and physical properties of post-treatment manganese oxide thin films for different oxygen concentration parameters were measured by x-ray diffraction (XRD) and operation current versus applied voltage ( I-V ) measurement. For I-V curves in different temperature, the ohmic conduction, space charge limited conduction (SCLC), schottky emission conduction, and hopping conduction mechanism of manganese oxide RRAM devices were discussed and verified in initial metallic filament path forming process. Finally, the excess oxygen ions, vacancy, and defect factor resulting in bipolar and unipolar resistive switching behavior of thin films RRAM devices will be explained and investigated by metallic filament path forming model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
