Abstract
Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model.
Highlights
Many post-treatment fabrication processes for re-crystalline structure and polycrystalline quantities properties improvement of material structure of various oxide thin films were widely consideration and investigated
After thin films depositing process, the neodymium oxide thin film was post-treated by super supercritical CO2 fluid process (SCF)
The neodymium oxide thin films were placed in a supercritical fluid system at 150 ◦ C for 2 h, it was injected with 3000 psi supercritical carbon dioxide fluid (SCF) fluids that were mixed with 5 vol % pure
Summary
Many post-treatment fabrication processes for re-crystalline structure and polycrystalline quantities properties improvement of material structure of various oxide thin films were widely consideration and investigated. The rapid thermal annealing (RTA), the conventional furnace annealing (CFA), and low temperature polycrystalline (LTPS) process was an important indispensable and essential technology for physical and electrical properties improvement. The high fabrication temperature, long process time, high pollution reaction, and thermal budget effect were serious consideration problems for integrated circuits (IC) process. The different oxide thin film RRAM devices were widely investigated and discussed because of its non-volatility, long retention cycles, high storage capacity, low power consumption, and high speed To traps and oxygen vacancy efficiently decreased and passivated, no damaging diffusion effect into thin film, the excellent properties of liquid-like supercritical carbon dioxide fluid treatment (SCF) method on physical and electrical properties of thin films resistive random access memory (RRAM) devices were widely attracted considerable method [1,2,3,4,5].
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