The influence of confined acoustic phonon on the quantum Peltier effect in doped semiconductor superlattice in the presence of electromagnetic wave

Abstract

Based on the kinetic equation method, the quantum Peltier effect has been theoretically studied under the influence of confined acoustic phonon in doped semiconductor superlattice in the presence of the electromagnetic wave (laser radiation). There were complicated dependences of the analytical expression of the Peltier coefficient (PC) on quantities such as doped concentration of the superlattice, amplitude of the laser radiation, the cyclotron frequency of electrons and temperature of the system. In detailed consideration, the quantum number m was changed in order to characterize the influence of confined acoustic phonon. When setting the m to zero, we obtained the results that corresponded to the case of unconfined phonon. The theoretical results have been numerically evaluated and discussed for the GaAs:Si/GaAS:Be doped semiconductor superlattice (DSS). We found the oscillation of the PC according to enhancement of cyclotron frequency of electrons. Moreover, position of resonant peaks has shifted under the influence of phonon confinement. In the case of low doped concentration (n D), the PC decreased in non-linear way; then it reached a negative constant in high n D value. The non-linear change of the PC also has been detected when investigating its dependence on the laser amplitude. All numerical results have shown that the magnitude of the PC decreased due to the increase of phonon confinement effect. In short, the confinement of acoustic phonon caused the change of the quantum Peltier effect in DSS of GaAs:Si/GaAS:Be in quantitatively as well as qualitatively.