Abstract
Abstract Based on the quantum kinetic equation method, the Hall effect in doped semiconductor superlattices (DSSL) has been theoretically studied under the influence of confined LO-phonons and the laser radiation. The analytical expression of the Hall conductivity tensor, the magnetoresistance and the Hall coefficient of a GaAs:Si/GaAs:Be DSSL is obtained in terms of the external fields, lattice period and doping concentration. The quantum numbers N, n, m were varied in order to characterize the effect of electron and LO-phonon confinement. Numerical evaluations showed that LO-phonon confinement enhanced the probability of electron scattering, thus increasing the number of resonance peaks in the Hall conductivity tensor and decreasing the magnitude of the magnetoresistance as well as the Hall coefficient when compared to the case of bulk phonons. The nearly linear increase of the magnetoresistance with temperature was found to be in good agreement with experiment.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Science: Advanced Materials and Devices
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
