Abstract
The cutoff frequency ft and the collector-emitter breakdown voltage BVCEO are computed for various types of Si-based bipolar junction transistors with different doping profiles of the selectively implanted collectors (SIC). In particular the influence of the SIC profiles on the ft vs. BVCEO characteristics is investigated. It is shown that for slow BJTs the effects of collector profile variations are negligible. For fast HBTs, however, the actual SIC profile has a significant influence on the ft vs. BVCEO characteristics. Graded and steplike SIC profiles show an improvement compared to constant SIC doping, while retrograde profile deteriorate device performance. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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