Abstract
A calculation of a p-n-n+ structure small-signal impedance with high injection level is carried out taking into account the capture of carriers in deep traps. The impedance is calculated for the case of weak occupancy of the traps. For the two extreme cases corresponding to small and high rate of the leakage of carriers through the junctions as compared to the rate of their recombination in the n-base, the active and reactive components of the impedance of a long diode (w ≧ 3L), the inductive reactance Q-factor as functions of the current jo, the alternating signal frequency w, and the parameters of trapping centres are analyzed. The results obtained are compared with experimental data on the small-signal impedance of planar gold-doped silicon diodes. [Russian Text Ignored]
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