Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels

Kian-Giap Gan Kian-Giap Gan,Chi-Kuang Sun Chi-Kuang Sun,J.E Bowers

doi:10.1109/leos.2004.1363416

Femtosecond carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels

Kian-Giap Gan Kian-Giap Gan, Chi-Kuang Sun Chi-Kuang Sun + Show 1 more

https://doi.org/10.1109/leos.2004.1363416

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Publication Date: Dec 20, 2004

Affiliation: University of California, Santa Barbara, National Taiwan University

#High Injection Level #InP Based Laser Diodes + Show 8 more

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Abstract

The carrier dynamics of an InGaN multiple-quantum-well (MQW) laser diode under the high current injection level is examined using time-resolved pump-probe measurements. Subpicosecond intersubband hole relaxation and hole heating processes are found to dominate carrier dynamics responses, different from GaAs and InP based laser diodes.

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