Abstract
This work aims at the study ofalfa-particle-induced changes in the characteristics and parameters of silicon MOS-transistors with poly-silicon gate. The influence of alfa-irradiation on the threshold voltage Uth, transconductanse S and output resistance Ri of MOS transistors was studied. It was found that alfa-irradiation is accompanied by Uth decrease with irradiation time. The physical mechanisms of radiationaldefec-tcreation are analysed. The result of the observed changes of the parameters are interpreted within the model of the radiation-induced charges: positive in the volume undergate insulator and on the surface stages of the volume Si-SiO2. The possibility of the participation of the ions of hydrogen in the formation positive built-in charge in the SiO2 is discussed. The specialities of the behavior of density of the states Dit on the border Si-SiO2 with the time of irradiation isanalised.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
