Abstract
Erbium-doped gallium arsenide has been grown by molecular beam epitaxy under varying growth conditions and analysed by secondary ion mass spectrometry. The concentration of erbium incorporated into the gallium arsenide lattice for a given effusion cell temperature has been found to vary considerably with the V : III (As : Ga) flux ratio. Higher levels of erbium incorporation occur when growth takes place close to stoichiometry rather than under arsenic-rich conditions. This behaviour has been observed for erbium concentrations between 10 16 and 5 × 10 19cm −3. SIMS data show the existence of an erbium-rich surface layer which, in the presence of unintentional impurities, is incorporated into the GaAs at an enhanced rate forming an unusual doping spike.
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