Abstract
The effects of post gate annealing on microwave noise performance of AlGaN/GaN HEMTs on SiC substrate were investigated. The results show that post Schottky gate annealing under an optimized condition, 400°C for 10min in N2 ambient, can increase the current driving capability, reduce gate leakage current, and improve the microwave noise performance. Specifically, the maximum extrinsic transconductance increased from 223mS/mm to 233mS/mm. The 1mA/mm gate leakage current at Vgs=−30V reduced to 4nA/mm. Before annealing, the device exhibited a minimum noise figure of 0.99dB at 4GHz. It decreased to 0.63dB and the associated gain increased from 13.2dB to 17.4dB at the mean time. The change is even more significant under high current operation. At 4GHz, the 4.90dB NFmin at Ids of 670mA/mm decreased more than 3dB to 1.12dB. Based on a simple noise model, the improvement of the microwave noise performance is attributed to the significant decrease of the gate leakage current.
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